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March 15, 1980Applied Physics Letters

Stress-relieved regrowth of silicon on sapphire by laser annealing

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GSG.A. Sai-HalaszIBM (United States)FFF. F. FangIBM (United States)TST. O. SedgwickIBM (United States)

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Sai-Halasz et al. (1980) studied this question.

synapsesocial.com/papers/6a8a9515ec2e105e8ac15688https://doi.org/10.1063/1.91523
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Also Consider

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  1. 1Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniques1979 · 115 citations
  2. 2Elastoresistance of <i>n</i>-type silicon on sapphire1974 · 41 citations