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January 1, 1979Applied Physics Letters

Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniques

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Authors

SLS.S. LauUniversity of OxfordSMS. MattesonUniversity of North Carolina at Chapel HillJMJ. W. MayerON Semiconductor (United States)

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Lau et al. (1979) studied this question.

synapsesocial.com/papers/6a9117358b76b10fb073dcd3https://doi.org/10.1063/1.90564
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Disorder produced by high-dose implantation in Si1976 · 94 citations
  2. 2Ion-Channeling Studies of Epitaxial Layers1972 · 34 citations
  3. 3Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si1978 · 587 citations