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June 15, 2015IEEE Electron Device Letters

High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique

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Authors

SHSen HuangInstitute of MicroelectronicsXLXinyu LiuSuzhou Research InstituteJZJinhan ZhangChongqing Normal University

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Huang et al. (2015) studied this question.

synapsesocial.com/papers/6a77df22d3a6aa87c6be0175https://doi.org/10.1109/led.2015.2445353
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