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October 8, 2010IEEE Electron Device Letters

18-GHz 3.65-W/mm Enhancement-Mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation

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Authors

ZFZhihong FengStomatology HospitalRZRui ZhouUniversity of Science and Technology of ChinaSXShengjun XieChina University of Mining and Technology

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Feng et al. (2010) studied this question.

synapsesocial.com/papers/6aa3a70baaaedccdac749697https://doi.org/10.1109/led.2010.2072901
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