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The electrical transport properties of In2Se3 and of impurity-doped In2Se3 are investigated. An attempt is made to throw light on the origin of the free carrier concentration in annealed and quenched samples. The temperature dependence of the electrical conductivity and Hall mobility of sulfur- and lithium-doped In2Se3 are studied. A number of native electrically active centres is proposed whose concentration virtually does not vary upon doping with donor-like or acceptor-like impurities. A detailed study is made on the effects of the deviation from the stoichiometry by impurity doping.
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Julien et al. (1986) studied this question.
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