Tandem cells of GaAs grown by metalorganic chemical vapor deposition (MOCVD) on thin Ge to address both higher efficiency and reduced weight are discussed. GaAs/Ge monolithic tandem cells of 4-cm/sup 2/ area have been produced with independently verified efficiencies up to 21.7% (AM0, one sun, 25 degrees C, total area). Under AM1.5 global conditions, efficiencies are up to 24.3%. These are believed to be the highest one-sun efficiencies reported for GaAs/Ge cells, and the highest efficiency for a two-terminal monolithic tandem cell.>
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Tobin et al. (1988) studied this question.
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