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A general formula has been developed for the transient response of drain current in inversion-mode InP MISFETs on the basis of a tunneling injection model. A spectroscopic measurement method has been found for determining parameters of insulator trap states which cause the current drift. The method has then been applied to an InP MISFET with a gate insulator BN. Further, the tunneling injection effect on hysteresis in capacitance-voltage characteristics has been discussed in InP MIS structures.
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Yamaguchi et al. (1984) studied this question.
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