Lightly phosphorus-doped homoepitaxial diamond films grown by chemical vapor deposition

Lightly phosphorus-doped {111} homoepitaxial diamond films have been grown by microwave plasma-assisted chemical vapor deposition under optimized growth conditions. The Phosphorus concentration in the film can be controlled at a low doping level of the order of 1016cm−3. N-type conductivity of the films with phosphorus concentrations above 1×1016cm−3 is reproducibly confirmed by Hall-effect measurements in the temperature range from 300to873K. The highest value of the Hall mobility at room temperature is 660cm2∕Vs obtained for a film with a phosphorus concentration of 7×1016cm−3.