Growth of Ga₂O₃ film on ScAlMgO₄ substrate by mist-chemical vapor deposition

ScAlMgO 4 (SAM) substrates have a trigonal structure with high cleavability in the c-plane. Because this substrate can be easily cleaved, gallium oxide (Ga 2 O 3 ) can be grown on the SAM substrate, and the difficulty in the heat dissipation of Ga 2 O 3 may be solved. Therefore, in this study, we performed Ga 2 O 3 growth on a SAM substrate using mist-chemical vapor deposition. When the growth temperature was varied at 500 °C, 600 °C, and 700 °C, ε -Ga 2 O 3 (004) grew dominantly, and the crystallinity improved with increasing temperature. Moreover, the grown ε -Ga 2 O 3 had orthorhombic structure and formed rotational domains. Furthermore, a phase transition to β -Ga 2 O 3 was achieved by annealing the resulting ε -Ga 2 O 3 on the SAM substrates. We also succeeded in separating the SAM substrates on which the Ga 2 O 3 thin films were grown.