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Blue InGaN∕GaN multiple-quantum-well light emitting diodes with a peak emission wavelength of 444nm were grown on low extended defect density semipolar (101¯1¯) bulk GaN substrates by conventional metal-organic chemical vapor deposition. The calculated external quantum efficiency and output power at a drive current of 20mA under pulsed operations (10% duty cycle) were 29% and 16.21mW, respectively. The device exhibited virtually no peak electroluminescence wavelength shift with increasing drive currents, indicating a significant reduction of polarization-related internal electric fields.
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Zhong et al. (2007) studied this question.
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