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A segregation model is presented which accounts for the accumulation of Sn at the growing film surface and the corresponding Sn depletion near the film-substrate interface during the deposition of Sn-doped GaAs by molecular beam epitaxy. Calculated Sn profiles were found to provide a good fit to experimental data obtained by secondary ion mass spectrometry.
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Rockett et al. (1982) studied this question.
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