Low frequency noise characterizations of ZnO nanowire field effect transistors

We fabricated ZnO nanowire field effect transistors (FETs) and systematically characterized their low frequency (f) noise properties. The obtained noise power spectra showed a classical 1∕f dependence. A Hooge’s constant of 5×10−3 was estimated from the gate dependence of the noise amplitude. This value is within the range reported for complementary metal-oxide semiconductor (CMOS) FETs with high-k dielectrics, supporting the concept that nanowires can be utilized for future beyond-CMOS electronic applications from the point of view of device noise properties. ZnO FETs measured in a dry O2 environment displayed elevated noise levels that can be attributed to increased fluctuations associated with O2− on the nanowire surfaces.