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A microscopic laser theory was used to investigate gain properties in Ga1−xInxNyAs1−y/GaAs quantum wells. We considered combinations of x and y giving laser emission around 1.30 μm. Optical properties affecting laser threshold and dynamical response are described for structures with strain ranging from compressive to tensile. A parametric study of this kind should provide useful information for the optimization of GaInNAs vertical-cavity surface-emitting laser gain media for telecommunications applications.
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Chow et al. (2003) studied this question.
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