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June 1, 1985IEEE Transactions on Electron Devices

Gallium arsenide Schottky power rectifiers

B. Jayant Baliga A.R. Sears M.M. Barnicle P. M. Campbell W. Garwacki J.P. Walden

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Abstract

This paper discusses the development of high-performance gallium arsenide Schottky rectifiers for power switching applications. These diodes are shown to exhibit superior turn-on and turn-off dynamic switching characteristics when compared with silicon p-i-n rectifiers. The theoretical analysis presented in the paper indicates that the gallium arsenide Schottky power rectifier will be attractive for high-frequency power switching circuits operating at 1.00-300 V.

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Cite This Study

Baliga et al. (1985) studied this question.

synapsesocial.com/papers/6a7bfcceae178dbf17c6502f https://doi.org/10.1109/t-ed.1985.22085

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