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We report In1−xGaxAsyP1−y/InP photodiode detectors with external quantum efficiencies of 50–70% without antireflection coating. The short- and long-wavelength response limits of these very efficient detectors can be compositionally tuned to lie anywhere in the wavelength range 0.9<λ<1.7 μm.
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Washington et al. (1978) studied this question.
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