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We report the effects of carrier concentration (NCH), indium (In) content, and crystallinity (Xc) on the electrical properties of indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs). The ITZO TFT with the lowest NCH, In content, and amorphous phase at the optimized oxygen flow rate has high field-effect mobility a (μFE) of 37.2 cm2/V·s, high ON/OFF current ratio (ION/IOFF) of ~ 1×107, and low subthreshold swing (S.S) of 0.93. With increasing NCH, In content, and Xc, μFE, ION/IOFF, and S.S surprisingly degraded to 14.4 cm2/V·s, ~ 4×104, and 4.01, respectively. Our high ITZO TFTs with μFEof 37.2 cm2/V·s, obtained thorough control of the NCH, In content, and Xc, was suitable for application to next generation ultrahigh resolution displays as well as high frame rate displays.
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Jang et al. (2013) studied this question.
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