The continuing miniaturization of semiconductor devices makes antimony attractive as an n-type dopant in Si because when it is implanted at low energy, it causes the resulting profile to be very shallow, thus lowering the barrier height. This paper discusses the application of a low dose of Sb, ion-implanted at 5 to 20 keV, to adjust the barrier height of Schottky barrier diodes. It also discusses the fabrication of resistors by ion implantation of Sb.
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Chu et al. (1980) studied this question.
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