Arsenic Doping Effects on the Structural and Electrical Properties of MoS ₂ Ceramics Designed for 5G/6G Technologies

MoS2 ceramic powders were doped with arsenic (As) using a solid-state reaction technique, with As concentration varied from 0.0 to 6.68 at%. Increasing As content significantly enhanced crystallinity and reduced porosity from 61.7% to 23.2%, while t rans forming the grain morpho logy fro m la mellar and f laky to three- dimensional polygonal grains. Temperature-dependent electrical studies revealed a nearly four times increase in conductivity and the formation of shallower donor levels of 204 meV within the MoS2 band structure. Frequency-dependent dielectric analysis showed improved dielectric response and reduced loss tangent values from 0.111 to 0.049, achieving a ‘Q ×f0’ figure of merit of 20.33 GHz and a cutoff frequency of 25.89 GHz at maximum doping. Planar antennas fabricated from undoped and As-doped ceramics, tested between 0.1 and 6.0 GHz, exhibited resonant behav iour at 2.6-2.9 GHz with return loss exceeding –28 dB. These results demonstrate As-doped M oS2 ceramics as promising candidates for 5G/6G communications.