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We have developed a novel triply modulated stimulated Raman gain spectrometer which reduces unwanted background effects by over 105. This has allowed the high resolution (Δν=1 cm−1) measurement of 20 Å of Si on sapphire with a signal-to-noise ratio of 100, with only 2 min of data collection. This sensitivity is several orders of magnitude larger than spontaneous Raman scattering.
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Levine et al. (1980) studied this question.
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