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The influence of proton irradiation on properties of commercial single-quantum-well AlGaN/InGaN/GaN green-light emitting diodes is studied. A dose of 2.3 Mrad degraded the room-temperature light emission from the irradiated area of the device, while the electrical device characteristics remain practically unchanged. At low temperatures (≃15 K), however, the light emission recovers almost entirely, indicating the formation of a nonradiative recombination channel within the active layer of the device.
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Osiński et al. (1997) studied this question.
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