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The realisation of single-mode ridge waveguides in a strained Si1−xGex epitaxial layer grown on silicon by MBE is reported. Measurements at λ = 1.3μm yield a refractive index enhancement of 2.2 × 10−3 for x = 0.01 and waveguide losses around 3–5 dB/cm.
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Splett et al. (1990) studied this question.
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