A very high-resistivity value (ρ 4K ∼ 4300 μΩcm), associated to a strong negative temperature dependence (α = 1/ρ · Δρ/Δ T ∼ −10 −3 K −1 ), is measured in pure icosahedral Al 63 Cu 25 Fe 12 phases (a single grain and polyquasicrystalline samples). Moreover the resistivity of the defective as-quenched Al 63 Cu 25 Fe 12 samples is much smaller (ρ 4K ∼ 1300 μΩcm) and increases sharply (up to ∼4300 μΩcm) after annealing treatment. We show also that the temperature and magnetic-field dependences of the resistivity and the Hall effect can be analysed through electron-electron interactions and localization theories.
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Klein et al. (1990) studied this question.
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