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Experimental study reveals native defect and impurity energy levels in CuInSe2 crystals, indicating specific vacancy and interstitial defect origins.
The impurity states occurring in CuInSe 2 crystals after annealing in an atmosphere of Se and in‐diffusion of In are determined by electrical measurements. The experimental results suggest the conclusion that the shallow donor with an ionization energy of about 10 meV is due to Se vacancies, the shallow acceptor with about 35 meV due to In vacancies, and the acceptor with about 100 meV due to Se interstitials. The deep acceptor with an ionization energy of about 400 meV is assumed to be due to Fe 2+ substituted on In sites.
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Neumann et al. (1981) studied this question.
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