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The temperature dependence of below-threshold emission from multiple quantum well semiconductor lasers is well characterized by a power law, in excellent agreement with Landau–Ginzburg theory of second-order phase transitions. We thereby show that it is the temperature dependence of net gain and not that of nonradiative recombination which primarily determines temperature sensitivity of threshold in long-wavelength injection lasers.
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O’Gorman et al. (1992) studied this question.
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