Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
June 6, 1996Electronics Letters

Silicon carbide on insulator formation using the Smart Cut process Note 1

View Full Paper
Ask AI
Bookmark
Share

Authors

LCL. Di CioccioCommissariat à l'Énergie Atomique et aux Énergies AlternativesYTY. Le TiecInstitut polytechnique de GrenobleFLF. LetertreSoitec (France)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Cioccio et al. (1996) studied this question.

synapsesocial.com/papers/6a7c9f7f93373eeacd19081fhttps://doi.org/10.1049/el:19960717
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Silicon Carbide Wafer Bonding1995 · 35 citations
  2. 2Silicon on insulator material technology1995 · 1,018 citations
  3. 3Distribution of irradiation damage in silicon bombarded with hydrogen1977 · 79 citations
  4. 4Plasma Contamination and Wall Erosion in Thermonuclear Reactors1971 · 72 citations