The basic principles of wafer fusion bonding including pretreatment, room temperature mating, and thermal annealing are presented. Techniques for the characterization of the bond quality are reviewed. Results for fusion bonding of other materials such as silicon nitride and polysilicon are discussed with a view to bond quality and application. Examples of fusion processes for power device fabrication show the feasibility of the technique.
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Harendt et al. (1992) studied this question.
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