Source/drain metallization to amorphous silicon thin-film transistors has been made by inkjet printing. Contact pads of a metal organic copper precursor were inkjet printed, and then converted to copper metal at a maximum process temperature of 200/spl deg/C. The copper contacts were used as the mask for back-channel etch. Laser printed toner was used for all other mask levels in a photoresist-free fabrication process. The inkjet printing of copper contacts represents a further step toward an all-printed thin-film transistor technology.
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Hong et al. (2000) studied this question.
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