A broadband planar Schottky balanced doubler at 800 GHz has been designed and built. The design utilizes two Schottky diodes in a balanced configuration on a 12 μm thick gallium arsenide (GaAs) substrate as a supporting frame. This broadband doubler (designed for 735 GHz to 850 GHz) uses a split waveguide block and has a relatively simple, fast, and robust assembly procedure. The doubler achieved /spl ap/10% efficiency at 765 GHz, giving 1.1 mW of peak output power when pumped with about 9 mW of input power at room temperature.
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Chattopadhyay et al. (2002) studied this question.
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