In this paper, an enhancement-mode GaN high-electron mobility transistor (HEMT)-based 7.2-kW single-phase charger was built. Connecting three such single-phase modules to the three-phase grid, respectively, generates a three-phase ∼22-kW charger with the>97%efficiency and>3.3-kW/ Lpower density, superior to present Si-device-based chargers. In addition to GaN HEMTs with fast-switching transitions yielding high efficiency, the proposed charger employs the dc/dc stage to control the power factor and power delivery simultaneously, yielding little dc-bus capacitance and thereby high power density. To secure the soft switching for all switches within full voltage and power ranges, a variable switching frequency control with dual phase shifts was adopted at high power, and a triple phase shift was employed to improve the power factor at low power. Both control strategies accommodated the wide input range (80–260 VAC) and output range (200–450 VDC). A closed-loop control for the three-phase charger was realized to minimize the output current ripple and balance the power among three single-phase modules. Experimental results validated this design.
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Lu et al. (2017) studied this question.
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