Submilliamp threshold 1.3 µm strained MQWlasers with novel p -substrateburied-heterostructure grown by MOVPE using TBA and TBP

An extremely low 0.4 mA threshold current has been achieved for novel current-blocking 1.3 µm strained MQW laser diodes. These devices are grown by MOVPE using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) precursors. The lowest threshold currents of 0.4 and 3.0 mA were obtained at 20 and 85°C, respectively, for a 150 µm-long 95%/98%-coated device.