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We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III-V compound semiconductors. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic simulations of heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) with MINIMOS-NT are presented in good agreement with measured data. The simulation examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation.
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Palankovski et al. (2001) studied this question.
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