Metal-oxide-semiconductor field-effect transistors fabricated in laterally seeded epitaxial Si layers on SiO2

Metal-oxide-semiconductor field-effect transistors (MOSFET’s) were fabricated in laterally seeded epitaxial Si layers on SiO2, using cw Ar laser irradiation. FET’s were distributed in various regions of the epitaxial films grown on SiO2, as well as directly on a Si substrate. Electronic properties were found to be good when compared with that for bulk Si, even though mobility at the SiO2 edge was somewhat poor. The results are discussed in connection with the crystal qualities examined through use of optical and electron microscopy.