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Metamorphic growth of lattice mismatched InGaP on GaAs has been used to fabricate a fast semiconductor saturable absorber mirror operating at the 1060nm wavelength range. The absorption recovery time could be reduced to ∼5ps without deteriorating the nonlinear absorption properties. The device was used to demonstrate self-starting operation of a mode-locked Yb-doped fiber laser and obtain high quality picosecond pulses.
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Suomalainen et al. (2006) studied this question.
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