Complementary Vertical FETs (CVFETs) Enabled by a Novel Dual-Side Process

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We demonstrated the monolithically integrated complementary vertical-channel field-effect-transistor (CVFET) inverters with an innovative dual-side process (DSP). Good electrical characteristics for both NMOS and PMOS were achieved: transconductance of 69 μS/μm, Ion= 18 μA/μm (@ VGS– VT= 0.45 V, VDD= 0.65 V), Ion/Ioff= 3.1 × 106, SS = 69 mV/dec and DIBL = 12 mV/V for the top NMOS, and transconductance of 592 μS/μm, Ion= 136 μA/μm (@ VGS– VT= -0.45 V, VDD= -0.65 V), Ion/Ioff= 5.4 × 106, SS = 72 mV/dec and DIBL=18 mV/V for the bottom PMOS. The functional CVFET inverters show well-balanced voltage transfer characteristics (VTC) up to 1.2 V with a maximum gain of 13 V/V. Furthermore, the CVFETs also featured with crystal-Si vertical channels and common self-aligned high-κ metal gates. The CVFET structure and its integration scheme are strong candidates for the applications of advanced logic technologies.