Role of mechanical stress in the resistance drift of Ge₂Sb₂Te₅ films and phase change memories

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation M. Rizzi, A. Spessot, P. Fantini, D. Ielmini; Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories. Appl. Phys. Lett. 28 November 2011; 99 (22): 223513. https://doi.org/10.1063/1.3664631 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search