Ion-implanted selenium profiles in GaAs as measured by secondary ion mass spectrometry

Depth profiles of Se-implanted GaAs samples have been measured using secondary ion mass spectrometry (SIMS). Analyses performed on liquid-nitrogen and room-temperature implants into Cr-doped substrates indicate that Se diffusion during subsequent heat treatment is negligible when the samples are annealed at 1000 °C for 15 min. A 12-h anneal at 1000 °C does, however, produce a diffused profile but with a diffusion constant of 2.8×10−15 cm2/sec as compared with the value 1×10−13 cm2/sec for thermal diffusion of Se at this temperature.