A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transistor on Separation-by-Implanted-Oxygen Substrate

A 25-nm-long channel metal-gate PtSi Schottky source/drain metal-oxide-semiconductor field effect transistor (MOSFET) fabricated on a separation-by-implanted-oxygen (SIMOX) substrate was demonstrated. The drain current and transconductance were 293 µA/µm and 431 mS/mm, respectively.