Hole traps in p-type Cu2O were studied by means of deep level transient spectroscopy in the heterostructure of p-Cu2O∕i-ZnO∕n-ZnO. In addition to the trap level at about 0.45eV from the valance band edge, which is already reported as being due to Cu vacancy, we found a new trap level at about 0.25eV. The new trap is tentatively assigned as Cu-di-vacancy from the trap concentration dependence on oxygen flow rate and substrate temperature.
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Paul et al. (2006) studied this question.
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