Increase in Drive Current by Pt/W Protection on Short-Channel Schottky Source/Drain Metal–Oxide–Semiconductor Field-Effect Transistors with Metal Gate

Schottky source/drain metal–oxide–semiconductor field-effect transistors (MOSFETs) with 20–100-nm-long metal gates were fabricated. Using a Pt/W protection film on Er, the drive current of an n-type MOSFET was improved to be two orders of magnitude larger than that without the protection. The drain currents were 11 µA/µm for the n-type at V DS = 1.5 V and V GS = 2 V, and 16 µA/µm for the p-type at V DS = -1.5 V and V GS = -2 V. A CMOS inverter was fabricated by the same process and its clear switching characteristics were shown.