High-resistivity InP (108 Ω cm) can be grown by means of metal organic vapor phase epitaxy using ferrocene as a dopant source. Adjacent zinc-doped layers of InP annihilate the resistivity of the (intentionally) iron-doped InP. The presence of Zn dramatically enhances outdiffusion of iron out off intentionally iron-doped layers of InP into the Zn-doped InP. Diffusion of Zn into the iron-doped InP is also observed.
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Young et al. (1990) studied this question.
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