High-power and high-speed 1.3 μm V-grooved inner-stripe lasers with new semi-insulating current confinement structures on p-InP substrates

A significant improvement in the maximum output power of a 1.3 μm GaInAsP/InP laser with a semi-insulating current confinement structure is reported. The improvement has been achieved by interposing an n-type InP layer between a p-InP substrate and an Fe-doped InP layer. A maximum cw output power of 180 mW and a modulation bandwidth of 8.5 GHz have been obtained.