What question did this study set out to answer?

The study aims to analyze non-linear distortions in a pre-matched GaN HEMT device under multi-tone signal conditions.

Linearity metrics of pre-matched AlGaN/GaN RF transistor: multi-tone simulation and measurement analysis

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Randomized trial assesses non-linear distortions in a GaN HEMT device, highlighting implications for performance optimization.

The study aims to analyze non-linear distortions in a pre-matched GaN HEMT device under multi-tone signal conditions.
Utilized Unequally Spaced Multi-Tone signals with 2, 4, and 6 tones.
Conducted on-wafer experimental measurements and non-linear Harmonic Balance simulations.
Performed continuous-wave load-pull simulations to determine optimal load impedance.
Increased number of tones leads to a substantial decrease in drain current density due to trapping effects.
Observed degradation in power-added efficiency (PAE) with increasing tones.
Derived an analytical relationship between adjacent channel power ratio (ACPR) and the number of tones.

A 2026 study studied this question.

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