Thermal oxidation of single-crystal p-type CdTe has been carried out in dry and wet oxygen. The thickness of the oxide varies as the square root of oxidation time, implying a diffusion controlled process. The activation energy for thermal oxidation is 1.2 eV. Examination of the oxide by Auger electron spectroscopy, x-ray photoelectron spectroscopy, and transmission electron microscopy shows that the composition of thick layers is CdTeO3; thin layers less than 100 Å thick may differ slightly in composition. An oxygen gradient is detected in as-grown thin oxides, but with storage in air at room temperature the oxygen gradient disappears. Values of chemical shift of the x-ray photoelectron spectroscopy peaks for the cadmium-tellurium-oxygen ternary system are clarified.
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Wang et al. (1987) studied this question.
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