A low threshold current density of 640 A/cm2 was obtained in a 1.5 μm GaInAs/AlGaInAs multiple quantum well laser diode, grown by metal organic chemical vapour deposition, with continuously graded-index separate-confinement-heterostructure. An internal waveguide loss of 14 cm−1 and internal quantum efficiency of 59% were obtained, which are comparable to those of GalnAs/GalnAsP quantum well laser diodes.
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Kasukawa et al. (1991) studied this question.
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