Electric double layer transistor with a (Ga,Mn)As channel

The authors have fabricated electric double layer transistors with a (Ga,Mn)As channel to investigate the possibility of larger modulation of magnetism by the application of electric fields. The sheet conductance as well as the Curie temperature can be modulated up to a few tens of percents by application of gate voltage of a few volts, which is almost one-order of magnitude smaller than that required in conventional metal-insulator-semiconductor structures. The 14 K modulation of the Curie temperature by applying gate voltage ranging from −1 to 3 V is the highest modulation ratio reported so far in ferromagnetic semiconductors.