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September 1, 2001Journal of Applied Physics

Minority carrier lifetime degradation in boron-doped Czochralski silicon

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SGStefan W. GlunzUniversity of Freiburg SRStefan ReinFraunhofer Institute for Solar Energy Systems JLJ. Y. LeeFraunhofer Institute for Solar Energy Systems

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Experimental investigation reveals light-induced lifetime degradation mechanisms in boron-doped Czochralski silicon, highlighting gallium doping and thermal annealing as effective mitigation...

Key Points

To elucidate the mechanism underlying light-induced minority carrier lifetime degradation in boron-doped Czochralski silicon and evaluate practical engineering solutions to eliminate the defect.
Analyzed defect activation and transition kinetics from passive to active states using recombination-enhanced defect reaction theory.
Evaluated gallium doping as an alternative dopant across a wide resistivity range in oxygen-contaminated Czochralski silicon.
Tested high-temperature annealing protocols using conventional tube furnaces and rapid thermal processing to deactivate boron-oxygen defect complexes.
Gallium-doped Czochralski silicon exhibited zero light-induced degradation, maintaining stable solar cell efficiencies comparable to high-purity float-zone silicon despite containing typical interstitial oxygen concentrations.
High-temperature thermal annealing of standard boron-doped Czochralski silicon permanently reduced the metastable defect concentration, yielding a 2- to 3-fold improvement in carrier lifetime.

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Glunz et al. (2001) studied this question.

synapsesocial.com/papers/6a7da3261b4d3003150452f2 https://doi.org/10.1063/1.1389076

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Implication

Experimental investigation reveals light-induced lifetime degradation mechanisms in boron-doped Czochralski silicon, highlighting gallium doping and thermal annealing as effective mitigation...

Minority carrier lifetime degradation in boron-doped Czochralski silicon

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Implication

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Cite This Study

Minority carrier lifetime degradation in boron-doped Czochralski silicon

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Implication

Key Points

Cite This Study

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