Experimental study demonstrates a giant spin Hall effect in beta-tungsten thin films, indicating efficient current-driven magnetization switching for magnetic memory devices.
We report a giant spin Hall effect in β-W thin films. Using spin torque induced ferromagnetic resonance with a β-W/CoFeB bilayer microstrip, we determine the spin Hall angle to be |θSHβ-W|=0.30±0.02, large enough for an in-plane current to efficiently reverse the orientation of an in-plane magnetized CoFeB free layer of a nanoscale magnetic tunnel junction adjacent to a thin β-W layer. From switching data obtained with such 3-terminal devices, we independently determine |θSHβ-W|=0.33±0.06. We also report variation of the spin Hall switching efficiency with W layers of different resistivities and hence of variable (α and β) phase composition.
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