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July 15, 1980Physical review. B, Condensed matter

Cyclotron resonance of electron inversion layers in Si (001) metal-oxide-semiconductor field-effect transistors (MOSFET's)

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Authors

RWR. J. WagnerDeutsches Zentrum für Luft- und Raumfahrt e. V. (DLR)TKT. A. KennedyRutgers, The State University of New JerseyBMB. D. McCombeUniversity at Buffalo, State University of New York

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Wagner et al. (1980) studied this question.

synapsesocial.com/papers/6a7dbf04286d888403cdaa09https://doi.org/10.1103/physrevb.22.945
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Cyclotron resonance of electrons in surface space-charge layers on silicon1976 · 189 citations
  2. 2Temperature dependence of dynamic conductivity of electrons in the surface inversion layer of semiconducting silicon1977 · 29 citations
  3. 3Mass Enhancement and Subharmonic Structure of Cyclotron Resonance in an Interacting Two-Dimensional Electron Gas1976 · 48 citations
  4. 4Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent Bond1965 · 337 citations