Vertical β-Ga₂O₃ Schottky Barrier Diodes With Field Plate Assisted Negative Beveled Termination and Positive Beveled Termination

In this letter, high performance verticalβ-Ga2O3 (001) Schottky Barrier Diodes (SBD) with field plate assisted negative beveled (FP-NB) and positive beveled (PB) termination are reported. For the SBD with FP-NB structure, the electrical field crowding is substantially suppressed owing to the field plate which is extended over the bevel. The reverse leakage current is reduced and the breakdown voltage of FP-NB SBD is improved over 1100V. A low differential ON-resistance of 2.6mΩ ·cm2, and a highI_on/I_offratio over10^9is achieved through etching recipe improvement, positive bevel with 67° mesa angle is successfully fabricated. The electric field crowding in SBD with PB termination is further suppressed owing to the reduction of positive charge at the edge. As a result, the breakdown voltage is significantly improved up to 1710 V. A Baliga’s figure of merit (FOM) of 0.80 GW/cm2 is achieved. Verticalβ-Ga2O3 SBDs with FP-NB and PB termination show the great potential for future power rectifiers.