Answers are grounded in this paper and cite their sources.
In this paper, we report on achieving the first high performance lateralβ-Ga2O3Schottky barrier diode (SBD) on sapphire substrate via transferringβ-Ga2O3nano-membrane channel from a low dislocation density bulkβ-Ga2O3substrate. Non field-plated lateral SBDs with Schottky–Ohmic contact distance of 4, 6, 11, and15 μm demonstrate a reverse breakdown voltage (BV) of 0.64, 0.85, 1.2, and 1.7 kV with on resistance (Rₒn) of 47, 66, 91, and 190ω ·mm, respectively. This lateralRon, sp~ BV performance is comparable to that of vertical SBDs. Combining with 107~ 108high temperature current on/off ratio,β-Ga2O3SBD shows its great promise for power rectifying once theβ-Ga2O3drift layer epitaxial growth becomes more mature.
No takes yet. Share an insight, caveat, or question.
Hu et al. (2018) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: